IndiumV3, Main, Repository, bibRecord, 000D34

Epitaxial undoped indium oxide thin films: Structural and physical properties

Identifieur interne : 000D34 ( Main/Repository ); précédent : 000D33; suivant : 000D35

Epitaxial undoped indium oxide thin films: Structural and physical properties

Auteurs : RBID : Pascal:13-0294219

Descripteurs français

Pascal (Inist)
- Propriété physique, Electron pulsé, Faisceau électronique, Procédé dépôt, Pression oxygène, Couche épitaxique, Figure pôle, Cristallite, Système désordonné, Conductivité électrique, Résistivité, Température ambiante, Température transition, Basse température, Propriété optique, Caractéristique électrique, Propriété électrique, Dispositif photovoltaïque, Oxyde d'indium, Couche mince, Oxyde d'aluminium, Oxygène, Semiconducteur, Matériau cristallin, Matériau transparent, Al2O3, In2O3.
Wicri :
- concept : Oxygène.

English descriptors

KwdEn :
- Aluminium oxide, Crystalline material, Crystallites, Deposition process, Disordered system, Electrical characteristic, Electrical conductivity, Electrical properties, Electron beam, Epitaxial film, Indium oxide, Low temperature, Optical properties, Oxygen, Oxygen pressure, Photovoltaic cell, Physical properties, Pole figures, Pulsed electron, Resistivity, Room temperature, Semiconductor materials, Thin film, Transition temperature, Transparent material.

Abstract

Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10^-2 mbar oxygen pressure and temperature up to 500 °C. Such conditions lead to the formation of dense, smooth and stoichiometric In₂O₃ films, with the cubic bixbyite structure. Epitaxial thin films were obtained at substrate temperatures as low as 200 C. Pole figure measurements indicate the existence of (111) oriented In₂O₃ crystallites with different in-plane symmetry, i.e. three-fold and six-fold symmetry. The origin of this effect may be related to the specificities of the growth method which can induce a large disorder in the oxygen network of In₂O₃, leading then to a six-fold symmetry in the (111) plane of the bixbyite structure. This temperature resistivity behaviour shows metallic conductivity at room temperature and a metalsemiconductor transition at low temperature for In₂O₃ films grown at 200 C, while the classical semiconductor behaviour was observed for the films grown at 400 and 500 °C. A maximum mobility of 24.7 cm²/V s was measured at 200 C, and then it falls off with improving the crystalline quality of films. The optical transparency is high (> 80%) in a spectral range from 500 nm to 900 nm.

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Pascal:13-0294219

Le document en format XML

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<author><name sortKey="Seiler, W" uniqKey="Seiler W">W. Seiler</name>
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<s2>75013 Paris</s2>
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<author><name sortKey="Nistor, M" uniqKey="Nistor M">M. Nistor</name>
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<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut des Nanosciences de Paris (INSP), UMR CNRS 7588, Université Pierre et Marie Curie-Paris 6, Place Jussieu</s1>
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<author><name sortKey="Perriere, J" uniqKey="Perriere J">J. Perrière</name>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut des Nanosciences de Paris (INSP), UMR CNRS 7588, Université Pierre et Marie Curie-Paris 6, Place Jussieu</s1>
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<term>Crystalline material</term>
<term>Crystallites</term>
<term>Deposition process</term>
<term>Disordered system</term>
<term>Electrical characteristic</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Electron beam</term>
<term>Epitaxial film</term>
<term>Indium oxide</term>
<term>Low temperature</term>
<term>Optical properties</term>
<term>Oxygen</term>
<term>Oxygen pressure</term>
<term>Photovoltaic cell</term>
<term>Physical properties</term>
<term>Pole figures</term>
<term>Pulsed electron</term>
<term>Resistivity</term>
<term>Room temperature</term>
<term>Semiconductor materials</term>
<term>Thin film</term>
<term>Transition temperature</term>
<term>Transparent material</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Propriété physique</term>
<term>Electron pulsé</term>
<term>Faisceau électronique</term>
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<term>Pression oxygène</term>
<term>Couche épitaxique</term>
<term>Figure pôle</term>
<term>Cristallite</term>
<term>Système désordonné</term>
<term>Conductivité électrique</term>
<term>Résistivité</term>
<term>Température ambiante</term>
<term>Température transition</term>
<term>Basse température</term>
<term>Propriété optique</term>
<term>Caractéristique électrique</term>
<term>Propriété électrique</term>
<term>Dispositif photovoltaïque</term>
<term>Oxyde d'indium</term>
<term>Couche mince</term>
<term>Oxyde d'aluminium</term>
<term>Oxygène</term>
<term>Semiconducteur</term>
<term>Matériau cristallin</term>
<term>Matériau transparent</term>
<term>Al2O3</term>
<term>In2O3</term>
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<front><div type="abstract" xml:lang="en">Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10<sup>-2</sup>
 mbar oxygen pressure and temperature up to 500 °C. Such conditions lead to the formation of dense, smooth and stoichiometric In<sub>2</sub>
O<sub>3</sub>
 films, with the cubic bixbyite structure. Epitaxial thin films were obtained at substrate temperatures as low as 200 C. Pole figure measurements indicate the existence of (111) oriented In<sub>2</sub>
O<sub>3</sub>
 crystallites with different in-plane symmetry, i.e. three-fold and six-fold symmetry. The origin of this effect may be related to the specificities of the growth method which can induce a large disorder in the oxygen network of In<sub>2</sub>
O<sub>3</sub>
, leading then to a six-fold symmetry in the (111) plane of the bixbyite structure. This temperature resistivity behaviour shows metallic conductivity at room temperature and a metalsemiconductor transition at low temperature for In<sub>2</sub>
O<sub>3</sub>
 films grown at 200 C, while the classical semiconductor behaviour was observed for the films grown at 400 and 500 °C. A maximum mobility of 24.7 cm<sup>2</sup>
/V s was measured at 200 C, and then it falls off with improving the crystalline quality of films. The optical transparency is high (> 80%) in a spectral range from 500 nm to 900 nm.</div>
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<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>National Institute for Lasers, Plasma and Radiation Physics (NILPRP), L22 P.O. Box. MG-36</s1>
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<s3>ROU</s3>
<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>Institut des Nanosciences de Paris (INSP), UMR CNRS 7588, Université Pierre et Marie Curie-Paris 6, Place Jussieu</s1>
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<s3>FRA</s3>
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<fC01 i1="01" l="ENG"><s0>Indium oxide thin films were grown by the pulsed electron beam deposition method on c-cut sapphire substrates at 10<sup>-2</sup>
 mbar oxygen pressure and temperature up to 500 °C. Such conditions lead to the formation of dense, smooth and stoichiometric In<sub>2</sub>
O<sub>3</sub>
 films, with the cubic bixbyite structure. Epitaxial thin films were obtained at substrate temperatures as low as 200 C. Pole figure measurements indicate the existence of (111) oriented In<sub>2</sub>
O<sub>3</sub>
 crystallites with different in-plane symmetry, i.e. three-fold and six-fold symmetry. The origin of this effect may be related to the specificities of the growth method which can induce a large disorder in the oxygen network of In<sub>2</sub>
O<sub>3</sub>
, leading then to a six-fold symmetry in the (111) plane of the bixbyite structure. This temperature resistivity behaviour shows metallic conductivity at room temperature and a metalsemiconductor transition at low temperature for In<sub>2</sub>
O<sub>3</sub>
 films grown at 200 C, while the classical semiconductor behaviour was observed for the films grown at 400 and 500 °C. A maximum mobility of 24.7 cm<sup>2</sup>
/V s was measured at 200 C, and then it falls off with improving the crystalline quality of films. The optical transparency is high (> 80%) in a spectral range from 500 nm to 900 nm.</s0>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
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<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Electron beam</s0>
<s5>03</s5>
</fC03>
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<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>04</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Epitaxial film</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Capa epitáxica</s0>
<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<fC03 i1="11" i2="X" l="ENG"><s0>Resistivity</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Resistividad</s0>
<s5>11</s5>
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<s5>12</s5>
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<s5>13</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Transition temperature</s0>
<s5>13</s5>
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<s5>18</s5>
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<s5>24</s5>
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<s2>NC</s2>
<s2>FX</s2>
<s5>25</s5>
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<s2>NC</s2>
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<s5>25</s5>
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<s5>27</s5>
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<s5>27</s5>
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<fC03 i1="25" i2="X" l="FRE"><s0>Matériau transparent</s0>
<s5>28</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Transparent material</s0>
<s5>28</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Material transparente</s0>
<s5>28</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Al2O3</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fN21><s1>280</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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   |texte=   Epitaxial undoped indium oxide thin films: Structural and physical properties
}}

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Epitaxial undoped indium oxide thin films: Structural and physical properties

Epitaxial undoped indium oxide thin films: Structural and physical properties

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